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Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science. To date, the atomic and electronic origins of SPEs within hBN have not been well understood, and no studies have reported photochromism or explored cross correlations between hBN SPEs. Here, we combine irradiation time-dependent microphotoluminescence spectroscopy with two-color Hanbury Brown–Twiss interferometry in an investigation of the electronic structure of hBN defects. We identify evidence of photochromism in an hBN SPE that exhibits single-photon cross correlations and correlated changes in the intensity of its two zero-phonon lines. 

Abstract Tuning broad emission in 2D Pb–Sn halide perovskites (HPs) is essential for advancing optoelectronic applications, particularly for color‐tunable and white‐light‐emitting devices. This broad emission is linked to structural factors, such as defects and phase segregation of the Pb component within the Pb–Sn system, which are strongly influenced by the molecular structure and chemical properties of spacer cations. Atomic tuning of the spacers via halogenation opens up a new way to fine‐tune the molecular properties, enabling further augmentations of HP functionalities. Nevertheless, the distinct broad emission's sensitivity to spacer chemistry remains underexplored. Here, halogenation's influence is systematically investigated on 2D HP emission characteristics using a high‐throughput workflow. These findings reveal that the F‐containing phenethylammonium (4F‐PEA) spacer narrows the broadband PL, whereas Cl broadens it. Through a correlative study, it is found that 4F‐PEA reduces not only the local phase segregation but also the defect levels and microstrains in 2D HPs. This is likely attributed to the manifestation of less lattice distortion via stronger surface coordination of the dipole‐augmented 4F‐PEA. These results highlight halogenation as a key factor in modulating phase segregation and defect density in 2D Pb–Sn HPs, offering a promising pathway to tune the emission for enhanced optoelectronic performance. 

Abstract Cesium‐based quasi‐2D halide perovskites (HPs) offer promising functionalities and low‐temperature manufacturability, suited to stable tandem photovoltaics. However, the chemical interplays between the molecular spacers and the inorganic building blocks during crystallization cause substantial phase complexities in the resulting matrices. To successfully optimize and implement the quasi‐2D HP functionalities, a systematic understanding of spacer chemistry, along with the seamless navigation of the inherently discrete molecular space, is necessary. Herein, by utilizing high‐throughput automated experimentation, the phase complexities in the molecular space of quasi‐2D HPs are explored, thus identifying the chemical roles of the spacer cations on the synthesis and functionalities of the complex materials. Furthermore, a novel active machine learning algorithm leveraging a two‐stage decision‐making process, called gated Gaussian process Bayesian optimization is introduced, to navigate the discrete ternary chemical space defined with two distinctive spacer molecules. Through simultaneous optimization of photoluminescence intensity and stability that “tailors” the chemistry in the molecular space, a ternary‐compositional quasi‐2D HP film realizing excellent optoelectronic functionalities is demonstrated. This work not only provides a pathway for the rational and bespoke design of complex HP materials but also sets the stage for accelerated materials discovery in other multifunctional systems. 

Abstract Quasi‐2D metal halide perovskites (MHPs) are an emerging material platform for sustainable functional optoelectronics, but the uncontrollable, broad phase distribution remains a critical challenge for applications. Nevertheless, the basic principles for controlling phases in quasi‐2D MHPs remain poorly understood, due to the rapid crystallization kinetics during the conventional thin‐film fabrication process. Herein, a high‐throughput automated synthesis‐characterization‐analysis workflow is implemented to accelerate material exploration in formamidinium (FA)‐based quasi‐2D MHP compositional space, revealing the early‐stage phase growth behaviors fundamentally determining the phase distributions. Upon comprehensive exploration with varying synthesis conditions including 2D:3D composition ratios, antisolvent injection rates, and temperatures in an automated synthesis‐characterization platform, it is observed that the prominentn= 2 2D phase restricts the growth kinetics of 3D‐like phases—α‐FAPbI₃MHPs with spacer‐coordinated surface—across the MHP compositions. Thermal annealing is a critical step for proper phase growth, although it can lead to the emergence of unwanted local PbI₂crystallites. Additionally, fundamental insights into the precursor chemistry associated with spacer‐solvent interaction determining the quasi‐2D MHP morphologies and microstructures are demonstrated. The high‐throughput study provides comprehensive insights into the fundamental principles in quasi‐2D MHP phase control, enabling new control of the functionalities in complex materials systems for sustainable device applications. 

Abstract Unlike single‐component 2D metal halide perovskites (MHPs) exhibiting sharp excitonic photoluminescence (PL), a broadband PL emerges in mixed Pb‐Sn 2D lattices. Two physical models –self‐trapped exciton and defect‐induced Stokes‐shift – are proposed to explain this unconventional phenomenon. However, the explanations provide limited rationalizations without consideration of the formidable compositional space, and thus, the fundamental origin of broadband PL remains elusive. Herein, the high‐throughput automated experimental workflow is established to systematically explore the broadband PL in mixed Pb‐Sn 2D MHPs, employing PEA (Phenethylammonium) as a model cation known to work as a rigid organic spacer. Spectrally, the broadband PL becomes further broadened with rapid PEA₂PbI₄phase segregation with increasing Pb concentrations during early‐stage crystallization. Counterintuitively, MHPs with high Pb concentrations exhibit prolonged PL lifetimes. Hyperspectral microscopy identifies substantial PEA₂PbI₄phase segregation in those films, hypothesizing that the establishment of charge transfer excitons by the phase segregation upon crystallization at high‐Pb compositions results in distinctive PL properties. These results indicate that two independent mechanisms—defect‐induced Stoke‐shifts and the establishment of charge transfer excitons by phase segregation—coexist which significantly correlates with the Pb:Sn ratio, thereby simultaneously contributing to the broadband PL emission in 2D mixed Pb‐Sn HPs. 

Abstract Mixed cesium‐ and formamidinium‐based metal halide perovskites (MHPs) are emerging as ideal photovoltaic materials due to their promising performance and improved stability. While theoretical predictions suggest that a larger composition ratio of Cs (≈30%) aids the formation of a pure photoactive α‐phase, high photovoltaic performances can only be realized in MHPs with moderate Cs ratios. In fact, elemental mixing in a solution can result in chemical complexities with non‐equilibrium phases, causing chemical inhomogeneities localized in the MHPs that are not traceable with global device‐level measurements. Thus, the chemical origin of the complexities and understanding of their effect on stability and functionality remain elusive. Herein, through spatially resolved analyses, the fate of local chemical structures, particularly the evolution pathway of non‐equilibrium phases and the resulting local inhomogeneities in MHPs is comprehensively explored. It is shown that Cs‐rich MHPs have substantial local inhomogeneities at the initial crystallization step, which do not fully convert to the α‐phase and thereby compromise the optoelectronic performance of the materials. These fundamental observations allow the authors to draw a complete chemical landscape of MHPs including nanoscale chemical mechanisms, providing indispensable insights into the realization of a functional materials platform. 

Abstract A robust process for fabricating intrinsic single‐photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room‐temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime‐limited linewidths is provided through measurements of inhomogeneous and temperature‐dependent broadening of the zero‐phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero‐phonon lines with instrument‐limited linewidths.